advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low on-resistance r ds(on) 12m fast switching characteristic i d 48a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j symbol value units rthj-c thermal resistance junction-case max. 3 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 36.8 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.3 29 24 continuous drain current, v gs @ 10v 30 pulsed drain current 1 120 gate-source voltage 20 continuous drain current, v gs @ 10v 48 parameter rating drain-source voltage 30 200504062-1/4 ap62t02gh/j pb free plating product g d s to-252(h) g d s to-251(j) g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP62T02GJ) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b , source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =20a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=100a/s - 25 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 3.starting t j =25 o c , v dd =25v , l=0.1mh , r g =25 2/4 ap62t02gh/j
ap62t02gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 23 46 69 92 115 0.0 2.0 4.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 30 60 90 120 0246 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 10 11 12 13 14 15 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v)
fig7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 ap62t02gh/j q v g 4.5v q gs q gd q g charge 0 3 6 9 12 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =2 4 v i d =30a 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le pulse 100us 1ms 10ms 100ms 1s dc 0 20 40 60 80 100 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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